| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent etch damage and remove polymer by irradiating ultraviolet(UV) rays after a gate electrode or a fine contact hole is formed through an etch process. CONSTITUTION: After an etch process is performed on a film on a substrate(30), UV rays are irradiated to the substrate including the film so that the etch damage or the polymer generated in the film is eliminated by an etch process, wherein the wavelength of the UV ray falls within a range of 100 to 300 nanometer. The temperature of a chamber is from 20 to 400 deg.C when the UV rays are irradiated. In irradiating the UV rays, O2 gas is inserted into the chamber and the flow rate of the O2 gas is from 10 to 1000 sccm.
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