发明名称 |
Thin film magnetic memory device writing data with bidirectional current |
摘要 |
An end of a selected bit line in a selected column is electrically coupled to an end of a corresponding current return line by one of first and second write column select gates, which are selectively turned on in response to results of column selection. A data write circuit sets the other end of the selected bit line and the other end of the current return line to one and the other of a power supply voltage and a ground voltage in accordance with a level of write data via one of first and second data buses and an inverted data bus, respectively.
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申请公布号 |
US2003117869(A1) |
申请公布日期 |
2003.06.26 |
申请号 |
US20020328032 |
申请日期 |
2002.12.26 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HIDAKA HIDETO |
分类号 |
G11C11/16;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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