| 发明名称 |
Planar metal electroprocessing |
| 摘要 |
The present invention relates to a process for forming a near-planar or planar layer of a conducting material, such as copper, on a surface of a workpiece using an ECMPR technique. The process preferably uses at least two separate plating solution chemistries to form a near-planar or planar copper layer on a semiconductor substrate that has features or cavities on its surface.
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| 申请公布号 |
US2003119311(A1) |
申请公布日期 |
2003.06.26 |
| 申请号 |
US20020201606 |
申请日期 |
2002.07.22 |
| 申请人 |
BASOL BULENT M.;TALIEH HOMAYOUN;UZOH CYPRIAN E. |
发明人 |
BASOL BULENT M.;TALIEH HOMAYOUN;UZOH CYPRIAN E. |
| 分类号 |
B23H5/08;C25D5/02;C25D5/06;C25D5/10;C25D5/18;C25D5/22;C25D5/48;C25D7/12;H01L21/288;H01L21/3205;H01L21/321;H01L21/768;(IPC1-7):H01L21/44;H01L21/302;H01L21/461 |
主分类号 |
B23H5/08 |
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