| 摘要 |
A method of fabricating a semiconductor device is provided, which eliminates the possibility that the surface of a recess is contaminated before and after the process of forming a gate electrode, and which achieves sufficient controllability of the shape of a gate electrode. First and second dielectric layers, which have been formed successively to cover the recess of a semiconductor base material, are selectively removed by dry etching at approximately equal etch rates, thereby forming a gate opening that penetrates the second and first dielectric layers to reach the surface of the base material in the recess. A gate electrode with an approximately T-shaped cross section is formed to contact the surface of the base material in the recess by way of the gate opening. The second dielectric layer is selectively removed by wet etching at an etch rate sufficiently greater than an etch rate of the first dielectric layer, exposing the first dielectric layer.
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