| 摘要 |
A method of forming a resist pattern and an exposure device using the method are provided in which a relatively large pattern, whose dimension is greater than a resolution limit of a KrF exposure technique, and an extremely fine pattern, whose dimension is less than or equal to the resolution limit of the KrF exposure technique, can be formed well and simultaneously. Two patterns are exposed simultaneously by deep UV light of a wavelength of 248 nm on a resist film 10 formed of TDUR-P015 and formed on a surface of an SiO2 film 12. The two patterns are: a circular pattern of a dimension which is made larger, in accordance with a shrinkage rate, than a finally required pattern dimension, which circular pattern is formed at regions to be shrunk; and a circular pattern of a dimension which is finally required, which circular pattern is formed at regions not to be shrunk. A UV light exposure amount, which is of an amount such that heat resistance of the TDUR-P015 forming the resist film 10 improves and the resist pattern does not shrink, is applied only onto the regions not to be shrunk of the resist pattern obtained by development. Then, high temperature bake processing at 135° C. for 60 seconds is carried out.
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