| 摘要 |
<p>A design pattern is subjected to a light proximity effect correction by light proximity effect correction means (ST2). The pattern after the light proximity effect correction is simulated by simulation means to generate a transfer pattern of a gate electrode (ST3). Measurement point in the transfer pattern of the gate electrode is changed according to the characteristic required of the circuit (ST4, ST5). Then, it is decided whether the difference between the measurement point of the transfer pattern of the gate electrode and the design value is within an allowable range according to the characteristic required of the circuit: speed increase, stability, or leak current reduction (ST7). When the difference is not within the allowable range, the pattern of the measurement point is shifted (ST8). Feedback is repeated until the measurement point is within the allowable range (ST3 to ST8). Most appropriate correction is performed according to the characteristic required of the circuit within the range of functioning as the gate electrode.</p> |
