发明名称 BORON DOPED DIAMOND
摘要 <p>A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 (m, or has a volume exceeding 1 mm3, or a combination of such characteristics.</p>
申请公布号 WO2003052174(A2) 申请公布日期 2003.06.26
申请号 IB2002005324 申请日期 2002.12.13
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