Production of a cooling recess in a semiconductor product comprises preparing a semiconductor substrate, forming a mask on the rear side of the substrate, wet chemical etching the rear side, removing the mask

摘要

Production of a cooling recess in a semiconductor product comprises preparing a semiconductor substrate (10) with a heat generating component (12) on its front side; forming a mask on the rear side of the substrate; wet chemical etching the rear side of the substrate; removing the mask; and depositing a heat conducting layer on the structured rear side of the substrate. The mask has a first opening and a second opening for structuring a first recess (20) and a second recess (22). The second opening is positioned below the heat generating component. Preferred Features: The heat generating component is a power transistor, preferably an HBT or HEMT transistor. The second opening in the mask has a smaller diameter than the first opening. The substrate is a GaAs substrate. The heat conducting layer is a gold layer.