| 摘要 |
The present invention relates to a semiconductor device with vertical electron injection, comprising a support substrate (2), a structure comprising at least one monocrystalline thin film (7) transferred onto the support substrate and integral with the support substrate, and at least one electronic component, the support substrate (2) comprising at least one recess enabling electric or electronic access to the electronic component, through the monocrystalline thin film, the device also comprising means (13, 14) enabling vertical electron injection into the electronic component.
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