| 摘要 |
A method of determining a performance of plasma etch equipment is provided. The method comprises extracting data that depend on the performance of plasma etch equipment, during etching of the wafer, for example by calculating an etch rate and by calculating a non-uniformity of a film being etched. After that, the extracted data are compared to predetermined data, and on the basis of a result of comparing the extracted data with predetermined data the performance of the plasma etch equipment is determined. Further, a system for determining a performance of plasma etch equipment is provided.
|
