发明名称 |
Enhanced n-type silicon material for epitaxial wafer substrate and method of making same |
摘要 |
An enhanced n+ silicon material for epitaxial substrates and a method for producing it are described. The enhanced material leads to improved gettering characteristics of n/n+ epitaxial wafers based on these substrates. The method for preparing such n+ silicon material includes applying a co-doping of carbon to the usual n dopant in the silicon melt, before growing respective CZ crystals. This improves yield of enhanced n+ silicon material in crystal growing and ultimately leads to device yield stabilization or improvement when such n/n+ epitaxial wafers are applied in device manufacturing.
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申请公布号 |
US2003116083(A1) |
申请公布日期 |
2003.06.26 |
申请号 |
US20020307160 |
申请日期 |
2002.11.27 |
申请人 |
SUMCO OREGON CORPORATION |
发明人 |
KIRSCHT FRITZ G.;WILDES PETER D.;TODT VOLKER R.;FUKUTO NOBUO;SNEGIREV BORIS A.;KIM SEUNG-BAE |
分类号 |
C30B29/06;C30B15/00;C30B15/04;H01L21/205;H01L21/322;(IPC1-7):C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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地址 |
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