POST TREATMENT METHOD OF METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A post treatment method of a metal interconnection of a semiconductor device is provided to prevent the metal interconnection from being corroded by forming an aluminium alloy metal interconnection through a dry etch process using chlorine-base plasma and by performing a pre-heating process using N2 gas before a corrosion factor remaining on the aluminium alloy metal interconnection is removed by using H2O/O2/N2 plasma. CONSTITUTION: AlCl3 is removed by performing a pre-heating process on a wafer while chlorine-based plasma(Cl2, BCl3, etc.) is flowed. Cl on the wafer is eliminated by using H2O plasma. Resist is removed by using O2/N2 plasma. Residual gas is exhausted.