PROCESS FOR FORMATION OF A WIRING NETWORK USING A POROUS INTERLEVEL DIELECTRIC AND RELATED STRUCTURES

摘要

A precursor (30) of a low-k porous dielectric is applied to an integrated circuit substrate (20). The precursor comprises a host thermosetting material and a porogen. Crosslinking of at least some of the first host thermosetting material is produced to form a low-k dielectric matrix (31) without decomposing all of the porogen. This leaves a solid nonporous layer of the low-k dielectric matrix. Conductive elements (36) are then inlaid in the low-k dielectric matrix. After the conductive elements are formed, remaining porogen is decomposed to leave a porous low-k dielectric layer (42). The resulting conductive elements are smooth walled.