METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided to be capable of restraining the diffusion of dopants of a junction region due to a heat treatment by adding dopants which are the same as the dopants of the junction region on a bit line contact surface. CONSTITUTION: An interlayer dielectric(22) is formed on a semiconductor substrate(20) having a junction region(21). After forming a contact hole by etching the interlayer dielectric for exposing the junction region, a spacer insulating layer(23) is formed at both sidewalls of the contact hole. After adding dopants on the resultant structure, a metal barrier layer(26) made of a titanium layer(24) and a titanium nitride layer(25) is formed on the resultant structure. At this time, the added dopants are the same as the dopants of the junction region. A titanium silicide layer(27) is formed at the resultant structure by carrying out an RTP(Rapid Thermal Process). After depositing a tungsten layer(28) on the titanium nitride layer, a metal line is formed by patterning the tungsten layer.