METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to improve an electrical characteristic and yield by forming an O3-tetraethoxysilane(TEOS) oxide layer on an insulation layer composed of a plasma enhanced tetraethoxysilane(PE-TEOS) oxide layer such that the O3-TEOS has excellent planarization and adhesion. CONSTITUTION: An underlying insulation layer is formed on a semiconductor substrate(21) on which a predetermined process is performed. A conductive layer pattern is formed on the underlying insulation layer. The O3-TEOS oxide layer as an upper insulation layer is formed on the resultant structure so that the step coverage of the surface caused by the height of the conductive layer pattern is improved and a stable interfacial contact between the underlying insulation layer and the conductive layer pattern is made.