发明名称 FLASH MEMORY DEVICE
摘要 PURPOSE: A flash memory device is provided to reduce a time for reading data and a programming time by connecting one address to each input/output terminal of plural page buffers. CONSTITUTION: An input/output terminal for one address is connected to plural page buffers(21,22) for storing read data or program data of plural memory cells(M200-M215) into each cell. The data of the cells are stored into the page buffers, respectively when the data are read from the cells. The data stored into the page buffers are outputted from the same input/output terminal according to another address. The data are stored into the page buffers and the data are programmed in corresponding cells by using another input/output terminal according to the address when the data are programmed in the cells.
申请公布号 KR20030051043(A) 申请公布日期 2003.06.25
申请号 KR20010081941 申请日期 2001.12.20
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, IN SEON
分类号 G11C16/06;(IPC1-7):G11C16/06 主分类号 G11C16/06
代理机构 代理人
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