| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of increasing the contact surface of a gate electrode and a metal salicide layer by enlarging the upper portion of the gate electrode using an SEG(Selective Epitaxial Growing) process. CONSTITUTION: After forming an LDD(Lightly Doped Drain) region in a semiconductor substrate(11) having a gate electrode(13), an insulating layer(14) and a nitride layer(15) are sequentially deposited on the resultant structure. After exposing the upper surface of the gate electrode by carrying out a planarization process, the upper portion of the gate electrode is protruded by partially removing the insulating layer and nitride layer. A silicon layer(16) is then formed on the exposed surface of the gate electrode. After forming a source/drain region in the semiconductor substrate, a salicide layer(17) is formed by carrying out a heat treatment using cobalt and titanium. Preferably, the silicon layer is formed by carrying out an SEG process.
|
