| 摘要 |
PURPOSE: A method for forming a gate of a semiconductor device is provided to be capable of securing a buffer layer without the oxidation of tungsten by forming an oxide buffer layer between a gate sealing nitride layer and a gate space nitride layer. CONSTITUTION: After sequentially forming a gate oxide layer(21), a polysilicon layer(22), a tungsten layer(23), and a nitride layer(24) on the upper portion of a semiconductor substrate(20), a photoresist pattern is formed on the resultant structure. A predetermined pattern is formed by sequentially etching the nitride layer, tungsten layer, and polysilicon layer using the photoresist pattern as a mask. After depositing a gate sealing nitride layer(26) on the resultant structure, an oxide buffer layer(27) is formed on the gate sealing nitride layer. Then, a gate space nitride layer(28) and a gate space oxide layer(29) are sequentially formed on the oxide buffer layer.
|
