METHOD FOR FORMING TRANSISTOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to be capable of reducing leakage current by forming a shallow junction without using ion-implantation for LDD(Lightly Doped Drain). CONSTITUTION: A gate oxide layer(21) and a gate electrode(22) are sequentially formed on a semiconductor substrate(20). The gate electrode(22) and the gate oxide layer(21) are selectively etched using a photoresist pattern as a mask, and the remaining gate oxide layer is entirely removed by using HF + H2O solution. A phosphorous-doped PSG(Phospho-Silicate Glass) film is deposited on the resultant structure. Phosphorous in the PSG film are diffused into the substrate by annealing so as to form source/drain region. Then, the PSG film is removed by cleaning using HF + H2O solution.