| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of restraining the deterioration of device characteristics due to the penetration of ions and optimizing a dual gate oxide layer and the characteristic of GOI(Gate Oxide Integrity) by forming a nitride layer between the first and second gate oxide layer. CONSTITUTION: A plurality of isolation layers(102) are formed in a semiconductor substrate(100) for defining a high and low voltage device region. The first gate oxide layer(106) is formed on the semiconductor substrate and the first insulating layer(105) is simultaneously formed between the first gate oxide layer and the semiconductor substrate. The second gate oxide layer(108) is formed on the first gate oxide layer and the first insulating layer is simultaneously removed to the surface between the first and second gate oxide layer. After forming the first polysilicon layer(110) on the second gate oxide layer, the first polysilicon layer and the second gate oxide layer of the low voltage device region are selectively removed by carrying out the first etching process. Preferably, the first and second gate oxide layer are formed by a thermal and wet oxidation, respectively. Preferably, a nitride layer is used as the first insulating layer.
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