METHOD FOR FORMING STORAGE NODE

摘要

PURPOSE: A method for forming a storage node is provided to be capable of preventing the embossing defects of a hard mask by forming an HSQ(Hydrogen Silses-Quioxane) layer between a TEOS(Tetra Ethyl Ortho Silicate) layer and the hard mark. CONSTITUTION: A TEOS oxide layer(20) is deposited at the upper portion of a substrate. An HSQ layer(21) is then deposited on the TEOS oxide layer(20). After carrying out a heat treatment at the resultant structure, a hard mask(22) made of a polysilicon layer is deposited on the resultant structure. Preferably, the TEOS oxide layer(20) having a thickness of 15000-25000 angstrom is deposited by carrying out a PECVD(Plasma Enhanced Chemical Vapor Deposition). Preferably, the HSQ layer(21) is deposited by carrying out an SOG(Spin On Glass) coating process.