| 摘要 |
PURPOSE: Provided are a sulfonyl diazomethane compound for resist materials to give the high resolution with good pattern profile design after development, and a photo acid generator, a resist material and a patterning process using the same. CONSTITUTION: The sulfonyl diazomethane compound is represented by the general formula 1, wherein R is the same or different, H, a 1-4C straight-chain, branched or cyclic substituted or unsubstituted alkyl or alkoxy; G is SO2 or CO; R3 is a 1-10C straight-chain, branched or cyclic substituted or unsubstituted alkyl or 6-14C substituted or unsubstituted aryl; p is 1 or 2; q is 0 or 1, p+q is 2, n is 0 or 1; m is an integer of 3-11; and k is an integer of 0-4.
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