发明名称 |
HIGH VOLTAGE DETECTION CIRCUIT FOR SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A high voltage detection circuit for semiconductor device is provided to minimize the power consumption within a range of a rated supply voltage. CONSTITUTION: A high voltage detection circuit includes a reference voltage generation portion(40) and a high voltage detection portion(50). The reference voltage generation portion generates a reference voltage having a voltage level more than the voltage level of a rated supply voltage of a chip. The high voltage detection portion receives the reference voltage and the supply voltage and outputs an output signal for indicating a high supply voltage when the supply voltage is the high supply voltage having the voltage level more than the voltage level of the reference voltage.
|
申请公布号 |
KR20030049668(A) |
申请公布日期 |
2003.06.25 |
申请号 |
KR20010079960 |
申请日期 |
2001.12.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, BAEK HYEONG;KIM, DU EUNG |
分类号 |
G11C5/14;(IPC1-7):G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|