发明名称 HIGH VOLTAGE DETECTION CIRCUIT FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE: A high voltage detection circuit for semiconductor device is provided to minimize the power consumption within a range of a rated supply voltage. CONSTITUTION: A high voltage detection circuit includes a reference voltage generation portion(40) and a high voltage detection portion(50). The reference voltage generation portion generates a reference voltage having a voltage level more than the voltage level of a rated supply voltage of a chip. The high voltage detection portion receives the reference voltage and the supply voltage and outputs an output signal for indicating a high supply voltage when the supply voltage is the high supply voltage having the voltage level more than the voltage level of the reference voltage.
申请公布号 KR20030049668(A) 申请公布日期 2003.06.25
申请号 KR20010079960 申请日期 2001.12.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, BAEK HYEONG;KIM, DU EUNG
分类号 G11C5/14;(IPC1-7):G11C5/14 主分类号 G11C5/14
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