| 摘要 |
PURPOSE: A method for forming contact of a semiconductor device is provided to be capable of preventing SAC(Self Align Contact) fail and simplifying manufacturing processes. CONSTITUTION: A gate oxide layer(20), a polysilicon layer(21), a nitride hard mask(22) and an anti-reflective layer(23) are sequentially formed on a substrate. After implanting nitrogen ions into the anti-reflective layer(23), a gate is formed by selectively etching the stacked structure. An oxide spacer(25) is formed at both sidewalls of the gate. At this time, a buried nitride layer(26) is formed between the hard mask(22) and the anti-reflective layer(23). A nitride spacer(27) is formed at both sidewalls of the oxide spacer(25). By filling an interlayer dielectric(28) and blanket etching of the interlayer dielectric(28), a landing plug contact is formed.
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