METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of improving etch profile when forming SAC(Self Align Contact) by using an APL(Advanced Planarization Layer). CONSTITUTION: A plurality of conductive patterns are formed on a substrate(10). A spacer insulating layer(14) is formed on the resultant structure. A TEOS layer(15) is formed on the spacer insulating layer(14). An advanced planarization layer(16) is formed on the TEOS layer. A contact hole is then formed to expose the surface of the substrate(10) between the conductive patterns by selectively etching the advanced planarization layer(16), the TEOS layer(15) and the spacer insulating layer(14).