METHOD FOR FABRICATING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to prevent depletion caused by a poly electrode and prevent a problem caused by high resistance of the poly electrode from occurring in a high speed device. CONSTITUTION: After the first oxide layer and the first metal mask pattern are formed on a silicon substrate, the first oxide layer is dry-etched by a predetermined portion. After the first metal mask pattern is eliminated, a conductive material is deposited. A chemical mechanical polishing(CMP) process is performed to form a lower plate(2). A dielectric layer(3) is deposited on the lower plate. After the second oxide layer(4) is deposited on the resultant structure, the first via mask pattern is formed on the second oxide layer to dry-etch the second oxide layer. The first via mask pattern is removed. The second metal mask pattern is formed on the resultant structure to dry-etch a predetermined portion of the second oxide layer. The second metal mask pattern is removed. A conductive material is deposited and a CMP process is performed to form an upper plate(5). A gapping nitride layer(6) is formed on the resultant structure. After the third oxide layer(7) is deposited on the gapping nitride layer, a metal contact is formed on the upper plate and the lower plate. After a metal is deposited on the resultant structure, a metal line(8) is formed to complete a metal-insulator-metal(MIM) capacitor.