| 摘要 |
PURPOSE: A method for fabricating a metal-insulator-metal(MIM) capacitor is provided to prevent the concentration of an electric field caused by defective surface roughness of the capacitor by improving surface roughness after a metal layer for a lower electrode of the capacitor is deposited. CONSTITUTION: A semiconductor substrate(21) on which an underlying layer(22) is formed is prepared. The first metal layer for the lower electrode is formed on the underlying layer. The first metal layer is surface-treated to improve the surface roughness. A dielectric layer(24) and the second metal layer for an upper electrode are sequentially formed on the surface-treated first metal layer for the lower electrode. The second metal layer and the dielectric layer are etched to form the capacitor upper electrode(25a). The first metal layer is etched to form the lower electrode(23b) of the capacitor.
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