| 摘要 |
PURPOSE: An electrostatic discharge protection circuit is provided to prevent the lowering of the electrostatic discharge(ESD) protection circuit with matching the driving time of the NMOS transistor by driving a plurality of NMOS transistors connected between the ground terminal and the node between the pad and the inner circuit by using the capacitor formed by stacking the metal pad and the polysilicon pad. CONSTITUTION: An electrostatic discharge prevention circuit includes a capacitor formed by stacking the metal pad(41) and the polysilicon pad(42) and a plurality of n-type metal oxide semiconductors(NMOSs) driven by the capacitor. The plurality of NMOSs are connected to the ground terminal and the node between the metal pad(41) and the inner circuit.
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