| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of increasing the contact surface between a gate electrode and a metal salicide layer by enlarging the upper portion of the gate electrode using an SEG(Selective Epitaxial Growing) process. CONSTITUTION: After depositing the second oxide layer at the upper portion of a semiconductor substrate(11) having a predetermined structure, a gate electrode(13) is exposed by carrying out a planarization process. After partially removing the second oxide layer for exposing the sidewalls of the gate electrode, a silicon layer(17) is formed on the exposed surface of the gate electrode. The remaining second oxide layer is then removed. After sequentially depositing cobalt and titanium on the entire surface of the resultant structure, a salicide layer(18) is formed on gate electrode and a source/drain region by carrying out a heat treatment. Preferably, the silicon layer is formed by using an SEG process.
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