发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS USING PLASMA
摘要 PURPOSE: A semiconductor manufacturing apparatus using plasma is provided to be capable of preventing the contamination of the edge portion of a semiconductor substrate due to large plasma particles by supplying anti-plasma gas to the lateral portion of a substrate pedestal using an anti-plasma gas supply part. CONSTITUTION: A semiconductor substrate(100) is processed by using plasma in a reaction chamber. A substrate pedestal(11) is installed in the reaction chamber for loading the semiconductor substrate(100). A gas jetting part is used for jetting and supplying reaction gas onto the semiconductor substrate(100) in the reaction chamber. An anti-plasma gas supply part(60) is installed on the substrate pedestal(11) for supplying anti-plasma gas to the lateral portion of the substrate pedestal. A gas supply part(20) is installed outside the reaction chamber for supplying reaction gas and anti-plasma gas to the reaction chamber and the anti-plasma gas supply part(60), respectively.
申请公布号 KR20030050736(A) 申请公布日期 2003.06.25
申请号 KR20010081251 申请日期 2001.12.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JIN SEONG;KIM, YEONG NAM;LEE, YEONG CHEOL
分类号 H01L21/02;(IPC1-7):H01L21/02 主分类号 H01L21/02
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