发明名称 |
SEMICONDUCTOR MANUFACTURING APPARATUS USING PLASMA |
摘要 |
PURPOSE: A semiconductor manufacturing apparatus using plasma is provided to be capable of preventing the contamination of the edge portion of a semiconductor substrate due to large plasma particles by supplying anti-plasma gas to the lateral portion of a substrate pedestal using an anti-plasma gas supply part. CONSTITUTION: A semiconductor substrate(100) is processed by using plasma in a reaction chamber. A substrate pedestal(11) is installed in the reaction chamber for loading the semiconductor substrate(100). A gas jetting part is used for jetting and supplying reaction gas onto the semiconductor substrate(100) in the reaction chamber. An anti-plasma gas supply part(60) is installed on the substrate pedestal(11) for supplying anti-plasma gas to the lateral portion of the substrate pedestal. A gas supply part(20) is installed outside the reaction chamber for supplying reaction gas and anti-plasma gas to the reaction chamber and the anti-plasma gas supply part(60), respectively.
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申请公布号 |
KR20030050736(A) |
申请公布日期 |
2003.06.25 |
申请号 |
KR20010081251 |
申请日期 |
2001.12.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, JIN SEONG;KIM, YEONG NAM;LEE, YEONG CHEOL |
分类号 |
H01L21/02;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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地址 |
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