METHOD FOR FABRICATING SEMICONDUCTOR TRANSISTOR

摘要

PURPOSE: A method for fabricating a semiconductor transistor is provided to prevent stress of a semiconductor substrate in a spacer formation process, and to make the impurities implanted into the semiconductor substrate not diffused to the outside by omitting a process for forming a spacer on a side of a gate electrode. CONSTITUTION: The gate electrode(34) of a reverse trapezoid type is formed on a semiconductor substrate(30). Impurity ions are implanted into the semiconductor substrate at a predetermined angle by using the gate electrode as a mask so that a low density source/drain region(36a,36b) is formed on a side of the gate electrode. Impurity ions are implanted into the low density source/drain region in a direction perpendicular to the gate electrode by using the gate electrode as a mask so that a high density source/drain region(38a,38b) is formed in the low density source/drain region.