| 摘要 |
PURPOSE: To improve the performance and reliability of a memory transistor in a non-volatile semiconductor memory device and facilitate the miniaturization of the same. CONSTITUTION: The non-volatile semiconductor memory device is provided with a semiconductor substrate 1 having a main surface, N¬+ diffused layers 2-4 formed on the main surface of the semiconductor substrate 1 with a space, a floating gate formed on an area between the N¬+ diffused layers 2, 4 through a silicon oxide film 5, an access gate formed on the area between the N¬+ diffused layers 2, 4 through silicon oxide films 5, 8 so as to be neighbored to the floating gate, and a control gate formed on the floating gate through a layer insulation film 15. The N¬+ diffused layer 2 is provided between the floating gates while the N¬+ diffused layer 4 is provided between the access gates.
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