| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve electrode capacitance by effectively controlling the growth of HSGs(Hemispherical Silicon Grains) on a silicon layer. CONSTITUTION: An insulating layer(40) having a groove is formed on a substrate(30) having a plug(33). A silicon layer(35) is formed according to the profile of the groove. In order to restrain the growth of hemispherical silicon grains, impurities are selectively implanted into the silicon layer(35) of the bottom of the groove. Then, an HSG layer(36) is grown on the surface of the silicon layer(35), thereby forming a storage electrode including the silicon layer(35) and the HSG layer(36).
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