发明名称 STROBE SIGNAL GENERATOR OF DATA BUS SENSE AMPLIFIER AND MEMORY DEVICE HAVING THE SAME
摘要 PURPOSE: A strobe signal generator of a data bus sense amplifier and a memory device having the same are provided to reduce a time and a cost for testing a memory device by changing an operating time the strobe signal generator according to a simple command. CONSTITUTION: A strobe signal generator includes a data bus sense amplifier and a strobe signal generator. The data bus sense amplifier is used for sensing and amplifying a signal of a data bus and providing the amplified signal to a global data bus. The strobe signal generator is used for generating a strobe signal for controlling a driving operation of the data bus sense amplifier by changing the pulse width of the activation of the strobe signal in response to a control signal at a test mode. The strobe signal generator includes an enable signal pulse width control portion to delay an enable signal at a normal mode and output the enable signal by controlling the pulse width of the activation of the enable signal at the test mode. The enable signal pulse width control portion includes a pulse generation portion(220), an inverter delay portion(210), and an output portion. The pulse generation portion outputs a test enable signal and the test enable signal having the controlled pulse width. The inverter delay portion delays the test enable signal. The output portion outputs a logically operated value of the outputs of the inverter delay portion and the pulse generation portion.
申请公布号 KR20030049187(A) 申请公布日期 2003.06.25
申请号 KR20010079328 申请日期 2001.12.14
申请人 HYNIX SEMICONDUCTOR INC. 发明人 BAE, SEUNG CHEOL
分类号 G11C8/18;(IPC1-7):G11C8/18 主分类号 G11C8/18
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