| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to be capable of improving charge transfer efficiency and restraining generation of dark current by forming a heavily doped shallow junction region(p0). CONSTITUTION: A gate electrode(23) is formed on the first conductive-type semiconductor layer(20). The first impurity region(n-) for a photodiode is formed in the semiconductor layer(20). The second impurity region(p0) having a shallow junction is formed on the surface of the first impurity region. A silicon oxynitride layer(26) for removing dangling bonds(25) is formed on the second impurity region(p0). By annealing the resultant structure, the dangling bonds(25) are removed by diffusing hydrogen into the surface of the second impurity region(p0).
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