发明名称 HIGH-FREQUENCY INDUCTOR HAVING SMALL CHANGE OF SMALL VALUE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A high-frequency inductor and a manufacturing method thereof are provided to reduce the damage of a substrate by preventing a self-resonance frequency from decreasing due to a fidelity and a parasitic capacitor. CONSTITUTION: A interlayer insulating film(42) having a predetermined thickness is formed on a substrate(40). A contact hole(44) is formed on the interlayer insulating film(42) to expose the substrate(40). The contact hole(44) is filled with a conductive plug(46) used as the first inductor unit. A flip chip bump(48a) covering the whole front surface of the conductive plug(46) on the interlayer insulating film(42). The flip chip bump(48a) is used as the second inductor unit. An RF(Radio Frequency) chip(50) including an active device and a passive device is formed at predetermined intervals from a surface of the interlayer insulating film(42). The flip chip bump(48a) connects the conductive plug(46) and a pad of the RF chip(50) between the interlayer insulating film(42) and the RF chip(50).
申请公布号 KR20030048691(A) 申请公布日期 2003.06.25
申请号 KR20010078673 申请日期 2001.12.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, GWANG DU;WOO, SANG HYEON
分类号 H01F27/25;(IPC1-7):H01F27/25 主分类号 H01F27/25
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