| 摘要 |
PURPOSE: A method for controlling the scan direction change of an ion implantation equipment for manufacturing a semiconductor device is provided to be capable of preventing the phenomenon of partial ion implantation due to the generation of glitch by using position detecting sensors. CONSTITUTION: Output value of a transducer(30) is received by a scan controller(20) under a scanning process for ion implantation, wherein the output value is related to the change of scan direction. Sensing data supplied from a plurality of position sensors(50,51), is then received by the scan controller, wherein the position sensors are capable of detecting the position of the transducer. When the output value is changed more than reference value, whether the scan direction is changed or not, is doubly checked by analyzing the sensing data instead of directly deciding the scan direction to be changed. When the output value is changed more than reference value and the scan direction is proved to be changed, the scan direction is decided to be changed.
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