Semiconductor strain sensor, method of manufacturing the sensor, and scanning probe microscope

摘要

A semiconductor strain sensor in which a pn junction or bipolar transistor is formed at the bending part of a probe. The probe (10) comprises a cantilever arm portion (10a) and a supporting portion (10b). An exploring needle is formed at the tip (10c) of the cantilever arm portion. To increase detecting sensitivity, a thin film (8) (or insulating film (40)) is applied to pre-stress the bending part of the probe. <IMAGE>