| 摘要 |
PURPOSE: A method for forming an isolation region of a semiconductor device is provided to be capable of preventing moats from being generated on the top portion of an isolation layer while carrying out a cleaning process. CONSTITUTION: After sequentially depositing an oxide layer(22) and a nitride layer on a semiconductor substrate(21), a nitride layer pattern(23a) is formed by selectively etching the nitride layer using a photoresist pattern as an etching mask. The first insulating spacer(25) is formed at both sidewalls of the nitride layer pattern. A trench is formed in the semiconductor substrate by selectively etching the substrate using the nitride layer pattern and the spacer as a mask. After depositing the second isolating layer(27) on the entire surface of the resultant structure, an annealing process is carried out at the temperature of 500-1400 °C. After forming an isolating layer in the trench by carrying out a polishing process, the nitride layer pattern is removed. Then, a cleaning process is carried out at the resultant structure. Preferably, an oxide layer is used as the first insulating spacer and the second isolating layer.
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