| 摘要 |
PURPOSE: A method for forming a mask pattern is provided to be capable of reducing manufacturing costs of wafers by using resist crosslink. CONSTITUTION: A semiconductor substrate(11) is prepared. A resist containing a crosslink agent is coated on the semiconductor substrate(11), exposed using a mask and baked. A blanket exposure is performed to the resist without using a mask. A reversed resist pattern(12a) is then formed by developing the resultant structure without baking. At the time, the crosslink agent in the resist is multi-functional ether, such as methyl ether and ethyl ether.
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