| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of forming a shallow junction without junction leakage. CONSTITUTION: A gate(212) is formed on a semiconductor substrate(200). After implanting lightly doped dopants into the substrate, an insulating spacer(216) is formed at both sidewalls of the gate. A buffer layer(208) composed of silicon oxide/silicon nitride or silicon nitride, is formed on the resultant structure. LDDs(204,214) and source and drain region(209,219) are formed in the substrate. A passivation layer(230) is formed on the entire surface of the resultant structure. Then, RTA(Rapid Thermal Annealing) is performed.
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