MANUFACTURING METHOD OF TITANIUM NITRIDE LAYER AND SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a barrier layer of a semiconductor device is provided to be capable of improving barrier properties of CVD(Chemical Vapor Deposition)-TiN layer. CONSTITUTION: An interlayer dielectric(42) having a contact hole is formed on a substrate(41). A metal film(44) is formed at inner walls of the contact hole, and a metal silicide(45) is formed at the interface between the substrate(41) and the contact hole. A CVD-TiN layer(46) as a barrier layer is formed on the resultant structure by depositing a titanium nitride layer using TiCl4 and NH3 as a source gas and by nitridation treating of the deposited titanium nitride layer at atmosphere containing N2 or NH3.