FORMING METHOD AND FORMING SYSTEM FOR INSULATION FILM,申请号KR20037007141-传众专利搜索

发明名称	FORMING METHOD AND FORMING SYSTEM FOR INSULATION FILM
摘要	A gate insulation film (104) of a MISFET (100) is constituted of a silicon oxide film (106), silicon nitride film (107), and high-permittivity film (108). The silicon oxide film (106) and silicon nitride film (107) are formed by microwave plasma processing with a radial line slot antenna. <IMAGE>
申请公布号	KR20030051883(A)	申请公布日期	2003.06.25
申请号	KR20037007141	申请日期	2003.05.28
申请人		发明人
分类号	H01L21/205;H01L29/78;H01L21/02;H01L21/28;H01L21/314;H01L21/316;H01L21/318;H01L29/51	主分类号	H01L21/205
代理机构		代理人
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