SEED LAYER PROCESS FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION OF FERROELECTRIC THIN FILM ON HIGH-K GATE OXIDE LAYER

摘要

PURPOSE: A seed layer process for a metal organic chemical vapor deposition(MOCVD) of a ferroelectric thin film on a high-k gate oxide layer is provided to more easily deposit a uniform ferroelectric thin film having a desired ferroelectric characteristic on the gate oxide layer, and to eliminate a problem that the ferroelectric thin film becomes random and rougher. CONSTITUTION: A silicon substrate is prepared. A high-k layer is formed on the silicon substrate. A seed layer of a ferroelectric material is deposited on the high-k layer at a relatively high temperature. A top layer of a ferroelectric material is deposited on the seed layer at a relatively low temperature. The substrate, the high-k layer and the ferroelectric layers are annealed to form the ferroelectric thin film.