| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of obtaining thermal stability of a gate and reducing gate resistance. CONSTITUTION: An insulating layer is formed on a semiconductor substrate(11) having an isolation region(12) and gates(13). At this time, the thickness of the insulating layer is thicker than that of the gate(13). The insulating layer is planarized to expose the surface of the gates(13). Also, the insulating layer is partially removed to expose the upper portion of the gates(13). An insulating spacer(16) is formed at both sidewalls of the lower portion of the gates. A polysilicon layer(19) is selectively grown on the exposed gates(13) and the exposed substrate. After forming a source and drain region(20,21) in the substrate, a silicide layer(22) is formed on the polysilicon layer.
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