METHOD FOR FABRICATING THIN FILM TRANSISTOR USING POLYCRYSTALLINE SILICON

摘要

PURPOSE: A method for fabricating a thin film transistor using polycrystalline silicon is provided to uniformly apply a photoresist layer by crystallizing an amorphous silicon layer and by planarizing the crystallized silicon layer through an etch process using a plasma process. CONSTITUTION: The amorphous silicon layer is formed on an insulated substrate. Laser is irradiated to the amorphous silicon layer and the amorphous silicon layer is crystallized through a lateral solidification process to form a crystalline silicon layer. The crystalline silicon layer is planarized through an etch process using plasma. The crystalline silicon layer is patterned to form a semiconductor layer. The semiconductor layer is covered with a gate insulation layer. A gate electrode is formed on the gate insulation layer of the semiconductor layer. Impurity ions are implanted into the semiconductor layer to form source and drain regions at both sides of the gate electrode. Source and drain electrodes are electrically connected to the source and drain regions, respectively.