| 摘要 |
PURPOSE: A method for forming a gate of a merged semiconductor device is provided to be capable of forming a plurality of transistors operated with different voltages by non-uniformly forming a gate oxide layer or forming different dielectric materials as the gate oxide layer according to each region. CONSTITUTION: After forming a flash high voltage transistor region(A), flash cell region(B), and a logic region(C) at a semiconductor substrate(10), a nitride layer(11) is deposited on the resultant structure. The nitride layer is selectively removed using the first resist pattern formed on the logic region as a mask. After removing the first resist pattern, a silicon layer is deposited on the resultant structure. After removing the silicon layer formed at the flash cell region and logic region, a gate oxide layer(15) is non-uniformly formed or different dielectric materials are used as the gate oxide layer according to each region. Then, a plurality of transistors operated different voltages, are formed.
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