| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of increase the contact surface between a gate electrode and a metal salicide layer by enlarging the upper surface of the gate electrode using an SEG(Selective Epitaxial Growing) process. CONSTITUTION: An LDD(Lightly Doped Drain) region is formed in a semiconductor substrate(11) having a gate electrode(13). After depositing an insulating layer(14) on the resultant structure, the gate electrode is exposed by polishing the insulating layer. After protruding the upper portion of the gate electrode by partially etching the insulating layer, a silicon layer(15) is formed on the protruded portion of the gate electrode. After removing the insulating layer, a spacer is formed at both sidewalls of the gate electrode. A source/drain region is formed by implanting doped dopants into the semiconductor substrate. A salicide layer(17) is formed on the gate electrode and the source/drain region by carrying out a heat treatment using cobalt and titanium.
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