| 摘要 |
PURPOSE: A method for planarizing a semiconductor device is provided to improve uniformity of a planarization process by using a photoresist pattern in a chemical mechanical polishing(CMP) process such that the photoresist pattern is used in a reverse etch-back process. CONSTITUTION: After photoresist is deposited on an oxide layer formed on a semiconductor substrate(100) in which a pattern rare area and a pattern sense area are defined according to a density of trenches, a predetermined exposure process is performed to form the photoresist pattern(106) so that the pattern rare area is open. A reverse etch-back process using the photoresist pattern as a mask is performed to etch a predetermined part of the oxide layer in the pattern rare area. A planarization process is performed while the photoresist pattern is not eliminated so that the upper portion of the resultant structure is planarized to fill the trench.
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