发明名称 HIGH VOLTAGE DETECTION CIRCUIT OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A high voltage detection circuit of a semiconductor device is provided to obtain a stabilized high voltage at burn-in test mode by using a differential amplifier of a symmetrical structure as a comparator. CONSTITUTION: A high voltage detection circuit includes the first voltage divider(110), the second voltage divider(120), the third voltage divider(130), a comparator(140), and a high voltage restraint circuit. The first voltage divider is operated at a normal mode to output the first divided voltage by dividing an internal supply voltage. The second voltage divider is operated at a test mode to output the second divided voltage by dividing the internal supply voltage. The third voltage divider is operated at the normal mode and the test mode to output the third divided voltage by dividing the internal supply voltage. The comparator the first input terminal connected to the first and the second voltage dividers and the second input terminal connected to the third voltage divider in order to compare the divided voltage of the first input terminal with the divided voltage of the second input terminal. The high voltage restraint circuit is connected between an output terminal of the comparator and a ground voltage to provide a current path between the output terminal of the comparator and the ground voltage in response to the third divided voltage.
申请公布号 KR20030050093(A) 申请公布日期 2003.06.25
申请号 KR20010080485 申请日期 2001.12.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, HUI CHUN;LEE, SEUNG HUN
分类号 G11C5/14;(IPC1-7):G11C5/14 主分类号 G11C5/14
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